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Microscale Patterning with Photolithography and Etching Processes ¿¹ºñ·¹Æ÷Æ® / 1. Á¦¸ñ 2. ½ÇÇè ¸ñÀû 3. ÀÌ·Ð 4. ½Ã¾à°ú ±â±¸ 5. ½ÇÇè ¹æ¹ý 6. References / 1. Á¦¸ñ Microscale ÆÐÅÍ´× ±â¼úÀº Çö´ë ¹ÝµµÃ¼ »ê¾÷°ú ³ª³ë±â¼ú¿¡¼ Áß¿äÇÑ ¿ªÇÒÀ» ÇÑ´Ù. ÀÌ °úÁ¤Àº ³ôÀº Á¤¹Ðµµ¿Í Çػ󵵷Π¹°ÁúÀÇ ¹Ì¼¼ÇÑ ±¸Á¶¸¦ Çü¼ºÇÏ´Â °ÍÀ» °¡´ÉÇÏ°Ô Çϸç, ÀÌ´Â ´Ù¾çÇÑ ÀüÀÚ±â±â¿Í ¼¾¼ÀÇ ¼º¡¦ |
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Microscale Patterning with Photolithography and Etching Processes °á°ú·¹Æ÷Æ® / 1. Results 2. Discussion 3. Summary / 1. Results Microscale Patterning with Photolithography and Etching ProcessesÀÇ ½ÇÇè °á°ú¸¦ ÀÚ¼¼È÷ »ìÆ캻´Ù. º» ½ÇÇè¿¡¼´Â ´Ù¾çÇÑ Æ÷Åä·¹Áö½ºÆ®¸¦ ÀÌ¿ëÇØ ¹Ì¼¼ÇÑ ÆÐÅÏÀ» Çü¼ºÇÏ°í, ÀÌÈÄ ¿¡Äª °úÁ¤À» ÅëÇØ ¿øÇÏ´Â ±¸Á¶¸¦ ±¸ÇöÇÏ´Â µ¥ ÁßÁ¡À» µÎ¾ú´Ù.¡¦ |
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³í¹® Soft lithography for micro- and nanoscale patterning À» Çѱ¹¾î·Î ¹ø¿ª ¹× ¿ä¾àÇÑ ³»¿ë. / 1. Introduction 2. ¥ìCP (microcontact printing) 3. REM (replica molding) 4. Photolithography versus soft lithography 5. Experimental design 6. Design of pattern. 7. Fabrication of mask. 8. Fabrication of master. 9. Fabrication of elastomeric stamp. 10. ¡¦ |
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¹ÝµµÃ¼ Mask Patterning °øÁ¤ ¼³°è ½ÇÇè º¸°í¼ A£« ·¹Æ÷Æ® / 1. Objective of experiment 2. Experimental equipment 3. Experimental materials 1) LithographyÀÇ ¿ø¸®¸¦ ¾Ë¾Ò´Â°¡ ±× ¿ø¸®¸¦ ¾Æ·¡¿¡ ¼³¸íÇϽÿÀ. 2) ¸ðµç ½ÇÇè°úÁ¤À» ÀÚ¼¼È÷ ÀûÀ¸½Ã¿À. (½Ã°£, ¿Âµµ µî ) ¿Ö ÀÌ·¸°Ô Çß´ÂÁöµµ ÀÚ¼¼È÷ ÀûÀ¸½Ã¿À. 3) Resistance, Resistivity, Conductance, Sheet resistance¸¦ ¸ð¡¦ |
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IGZO TFT PR patterning, channel dimension ¹ßÇ¥ PPT / 1. Introduction 2. Present progress 3. Experiments process 4. Results 5. Summary & Plans / 1. Introduction IGZO TFT´Â Indium Gallium Zinc Oxide Thin Film TransistorÀÇ ¾àÀÚ·Î, Â÷¼¼´ë µð½ºÇ÷¹ÀÌ ±â¼ú¿¡ ÇʼöÀûÀÎ ±¸¼º ¿ä¼ÒÀÌ´Ù. IGZO´Â ³ôÀº ÀüÀÚ À̵¿µµ¿Í ¿ì¼öÇÑ ±¤ÇÐÀû Ư¼ºÀ» Áö´Ñ ¹ÝµµÃ¼ ¼ÒÀç·Î, OLED ¹× ¡¦ |
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ITO Patterning ¿¹ºñ / 1. ½ÇÇè ¸ñÇ¥ 2. ½ÇÇè ¿ø¸® 3. Á¶»ç ³»¿ë 4. ±â±¸ ¹× ½Ã¾à 5. ½ÇÇè °úÁ¤ 6. Âü°í¹®Çå / 1. ½ÇÇè ¸ñÇ¥ ITO(Indium Tin Oxide)´Â Åõ¸í µµÀü¼º ¹°Áú·Î, ÀüÀÚ±â±â¿Í µð½ºÇ÷¹ÀÌ ±â¼ú¿¡¼ ±¤¹üÀ§ÇÏ°Ô »ç¿ëµÈ´Ù. ITO ÆÐÅÍ´×ÀÇ ½ÇÇè ¸ñÇ¥´Â ÀÌ ¹°ÁúÀÇ Æ¯¼ºÀ» È°¿ëÇÏ¿© °íÀ¯ÇÑ Àü±âÀû ¹× ±¤ÇÐÀû Ư¼ºÀ» °¡Áø ¹Ì¼¼ ±¸Á¶¸¦ Á¦ÀÛÇÏ´Â °ÍÀÌ´Ù. ÀÌ·¯ÇÑ ¸ñÇ¥´Â ¿©·¯ °¡Áö¡¦ |
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Patterning and treatment of SiO2 thin films °á°úº¸°í¼ ÀÎÇÏ´ëÇб³ A£« / 1. ¼·Ð (½ÇÇè°³¿ä, ¸ñÀû, Çʿ伺 µîÀ» ¼¼ú) 2. ½ÇÇè¹æ¹ý 3. ½ÇÇè°á°ú ¹× ºÐ¼® 4. °á·Ð 5. Process problem / 1. ¼·Ð (½ÇÇè°³¿ä, ¸ñÀû, Çʿ伺 µîÀ» ¼¼ú) SiO2(½Ç¸®Ä«) ¹Ú¸·Àº ¹ÝµµÃ¼, ±¤ÀüÀÚ ±â±â ¹× ³ª³ë±â¼ú µî ´Ù¾çÇÑ ÀÀ¿ë ºÐ¾ß¿¡¼ Áß¿äÇÑ ¿ªÇÒÀ» ÇÏ°í ÀÖ´Ù. ÀÌ·¯ÇÑ ¹Ú¸·Àº ±× Ư¼º°ú ±â´É¼º ´ö¡¦ |
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Patterning and treatment of SiO2 thin films ¿¹ºñº¸°í¼ A£« / 1. ½ÇÇè ¸ñÀû 2. ½ÇÇè ÀÌ·Ð 1) ÇöóÁ (Plasma) ¶õ 2) ¹ÝµµÃ¼ Á¦Á¶ °øÁ¤°ú Á¤ÀÇ 3) Lithography ¶õ 4) ½Ä°¢(etching)ÀÇ Á¾·ù¿Í Á¤ÀÇ 5) P-N Á¢ÇÕÀ̶õ 6) ¹Ú¸·ÀÇ ½Ä°¢ ¹× ÁõÂø °øÁ¤À» È°¿ëÇÑ ¼ÒÀڵ鿡 ´ëÇÑ ¿ø¸®¿Í ±¸Á¶ 7) ÈÇаøÇÐÀü°øÀÚ°¡ ¹ÝµµÃ¼ »ê¾÷¿¡¼ ÇÊ¿äÇÑ ÀÌÀ¯ (ÀÚ½ÅÀÇ »ý°¢À» ÷ºÎ) Âü°í¹®Çå (»ó¡¦ |
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Photolithography Mask Patterning ¹ÝµµÃ¼ °øÁ¤ ½ÇÇè º¸°í¼ A £«·¹Æ÷Æ® / 1. Objective of experiment 2. Experimental equipment 3. Experimental materials 4. Results and discussion 1) Photolithography ½ÇÇè°úÁ¤À» ÀÚ¼¼È÷ ÀûÀ¸½Ã¿À. (½Ã°£, ¿Âµµ µîÀÌ ) ¿Ö ÀÌ·¸°Ô Çß´ÂÁöµµ ÀÚ¼¼È÷ ÀûÀ¸½Ã¿À. 2) Etching ÀÇ ¿ø¸®¸¦ ÀûÀ¸½Ã¿À. 3) Etching ½ÇÇè°úÁ¤À» ÀÚ¼¼È÷ ÀûÀ¸½Ã¿À.¡¦ |
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[°íºÐÀÚÀç·á½ÇÇè]ITO patterning °á°ú·¹Æ÷Æ® / 1. ½ÇÇè¸ñÇ¥ 2. ½ÇÇè ¹è°æ 3. ½ÇÇè³»¿ë 4. ½ÇÇè °á°ú ¹× °íÂû 5. ÅäÀÇ»çÇ× 1) PRÀÇ Á¾·ù(positive or negative)¿¡ µû¶ó patternÀÌ Çü¼ºµÇ´Â ¸ð¾çÀ» »ý°¢ÇØ º¸ÀÚ. 2) Baking Á¶°Ç, ³ë±¤ ½Ã°£, etching time µî ÃÖÀûÀÇ Á¶°ÇÀ» ã¾Æº»´Ù. 3) °¢ °øÁ¤ ½Ã ÁÖ¿äÇÑ ¿ø¸® ¹× ¹ÝÀÀÀ» ÀÌÇØÇÑ´Ù. 6. Âü°í¹®Çå / 1. ½ÇÇè¸ñÇ¥ °íºÐÀÚÀç·á½Ç¡¦ |
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