1.1. ¿ÂµµT¿¡ µû¸¥ ÀúÇ×R
1.1.1. Four Probe Apparatus¿¡ ½Ã·á¸¦ ³Ö°í ovenÀ» °¡µ¿½ÃÄÑ ¿Âµµ¸¦ ¼³Á¤ÇØÁØ´Ù. ±×¸®°í Àü·ù º¯È¿¡ µû¸¥ Àü¾ÐÀ» ÃøÁ¤Çß´Ù. ÀÌ °úÁ¤À» ¿Âµµ¸¦ 30¡ÆC¿¡¼ 110¡ÆC±îÁö 20¡ÆC¾¿ ¿Ã·ÁÁÖ¸ç ¹Ýº¹ÇÏ¿´´Ù. ¸Å¹ø Àü·ù°¡ 0ÀÏ ¶§ Àü¾ÐÀ» 0À¸·Î ¸ÂÃç³õ¾Ò±â ¶§¹®¿¡, I¿¡ µû¸¥ V¸¦ ±×·¡ÇÁ·Î ±×¸± ¶§ ¿øÁ¡À» Áö³ªµµ·Ï °íÁ¤½ÃÄ×´Ù. À̶§ ¼±Çü ±Ù»ç½ÃŲ ±×·¡ÇÁÀÇ ±â¿ï±â°¡ V/I=RÀÌ µÈ´Ù.
1.1.2. ½Ç¸®ÄÜÀÌ ¾Ë·ç¹Ì´½¿¡ ºñÇØ ÀúÇ×ÀÌ ¸Å¿ì Å©°Ô ³ª¿Ô´Ù. ÀÌ´Â ½Ç¸®ÄÜÀº ¹ÝµµÃ¼ÀÌ°í ¾Ë·ç¹Ì´½Àº µµÃ¼À̹ǷΠŸ´çÇÑ °á°úÀÌ´Ù.
1.1.3. T¿¡ µû¸¥ R °ªÀ» ±×·¡ÇÁ·Î ±×·Áº¼ ¼ö ÀÖ¾ú´Ù. ½Ç¸®ÄÜÀº ´ëüÀûÀ¸·Î ¿Âµµ°¡ ³ôÀ» ¶§ ÀúÇ×ÀÌ Áõ°¡ÇÏ´Â °ÍÀ¸·Î º¸ÀδÙ. ÀÓÀ» »ý°¢ÇÏ¸é ¿Âµµ°¡ ³ôÀ» ¶§ ºñÀúÇ× °ªµµ ³ô¾ÆÁö´Â °ÍÀÌ´Ù. À̸¦ 2) (3)¿¡¼ ¾ð±ÞÇÏ´Â ±×¸²À» º¸¸é ÀÌ °æ¿ì°¡ °¡´ÉÇÔÀ» È®ÀÎ ÇÒ ¼ö ÀÖ´Ù. ¾Ë·ç¹Ì´½Àº ºñÀúÇ× ¿Âµµ°è¼ö°¡ ÀÓÀ» º¼ ¶§ Áõ°¡ÇÔÀÌ Å¸´çÇÏ´Ù´Â °ÍÀ» È®ÀÎÇÒ ¼ö ÀÖ´Ù.
1.2. ºñÀúÇ×
1.2.1. À¸·Î ºñÀúÇ×À» ±¸ÇÏ¿´´Ù. À̶§ S´Â Žħ»çÀÌÀÇ °£°ÝÀÌ´Ù.
1.2.2. ¾Ë·ç¹Ì´½ÀÇ °æ¿ì ½ÇÇè°ªÀ» À̷аª°ú ºñ±³ÇÒ ¼ö ÀÖ¾ú´Ù. À̷аªÀº ¥Øm, À» ¿¡ ´ëÀÔÇØ ¾òÀº °ªÀÌ´Ù. ÀÌ¡¦(»ý·«)
|
1.1. ¼°´ëÇб³ ¹°¸®Çаú, ¡º½ÇÇè¹°¸®ÇÐ ¸Å´º¾ó¡» 1.2. Resistivity Measurements on Germanium for Transistor by L.B. Valdes, Proceedings of the IRE, Vol. 42, pp. 420-427 (1954). 1.3. SHENG S. LI¡Ë and W. ROBERT THURBER (1977), THE DOPANT DENSITY AND TEMPERATURE DEPENDENCE OF ELECTRON MOBILITY AND RESISTIVITY IN n-TYPE SILICON, Solid State Electronics, Vol. 20, pp.609-616 (Science Direct) 1.4. David Halliday èâ 2¸í, ¡ºPrinciples of Physics¡», 10th edition, Wiley, 2014, pp. 672-675(resistance and resistivity) pp. 1143-1146(semiconductors and doping) 1.5. µÎ»ê¹é°ú: ºñÀúÇ× 1.6. À§Å°Çǵð¾Æ: Electrical resistance and conductance, Intrinsic semiconductor, Valence and conduction bands, Extrinsic semiconductor, Four-terminal sensing
|